Wireless Components delivers advanced RF switching for mission-critical defence systems.

TS86246P High Power RF Switch

Engineered by Tagore Technology and available locally through Wireless Components, the TS86246P GaN SPDT switch combines 200 W CW power handling with outstanding efficiency and linearity.

Designed as a modern replacement for traditional PIN-diode switch assemblies (read more here). GaN Switches eliminate high-voltage biasing, reduces component count, and shrink board area, enabling more compact, reliable, and thermally efficient RF systems across a wide range of critical platforms.

At a Glance

• Frequency Range: 1 MHz – 1.0 GHz
• Power Handling: 200 W CW, 330 W peak
• Insertion Loss: 0.07 dB @ 1 MHz
• Isolation: 62 dB @ 1 MHz, 49 dB @ 30 MHz
• Linearity: H2 = 93 dBc, H3 = 94 dBc @ 30 MHz, 50 dBm input
• Switching Time: 72 μs typical
• Supply Voltage: 2.6 – 5.25 V (no external RF DC-blocking caps required)
• Package: Compact 7 mm × 7 mm QFN-48

Applications

• Private mobile and tactical HF radios
• Public safety HF handsets
• Ham radios
• MRI machines
• Mechanical relay replacement
• HF antenna tuning

Replacing PIN-Diode Networks

The TS86246P offers clear advantages over legacy PIN-diode switch assemblies:

• 55+ parts → 2–4 parts
• ~300 mm² board → under 30 mm²
• ~2.5 W bias power → under 1 mW
• High-voltage rails → single low-voltage supply

The result: smaller, cooler, more reliable RF systems with faster time-to-field.

Find out more about GaN vs Pin Diodes here.

Local Defence-Ready Support

As the authorised representative of Tagore Technology across Australia and New Zealand, Wireless Components ensures technical expertise on the ground, rapid response quoting for defence programs, and logistics aligned with project timelines and compliance needs.

For additional information please visit www.wirelesscomponents.com.au